(digitimes) - Samsung Electronics announced that it has developed what it calls the industry's first 1Gbit mobile DRAM for mobile products, using 80nm process technology. The Korean chipmaker said it plans to mass produce the new device in the second quarter of 2007.
The new chip, also known as low-power DDR (double data rate) or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital cameras, portable media players and portable gaming products, Samsung noted, reports Trend.
Samsung said this monolithic 1Gbit mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gb memory solution widely used today, as the electric current in the new chip drops a full 30%, according to the company.
Although this new 1Gbit mobile DRAM chip uses the same packaging technique as the 512Mbit double-die stack 1Gbit package, Samsung introduces a new temperature-sensing feature in this solution resulting in a reduction of power drain in standby mode by 30% over conventional memory chip designs, claims the company.
In terms of size, Samsung said the new 1Gbit mobile DRAM chip is at least 20% thinner than a multi-stack package of 512Mbit dies, allowing a single high-density package solution of 1.5Gbit or even 2Gbit mobile DRAM memory. Samsung also offers 1Gbit mobile DRAM with flash memory in multi-chip packaging (MCP).